PART |
Description |
Maker |
MCP3204-BISL MCP3204-CIST MCP3204-CIP MCP3204-BIP |
2.7V 4-Channel/8-Channel 12-Bit A/D Converters with SPI Serial Interface 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口 TWIST-LOK 2.93,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口 CBS SCREW-MOUNT NYLON 3/4,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口 TWIST-LOK 2.68,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口 400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
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Microchip Technology Inc. Microchip Technology, Inc.
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SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
SUP65P06-20 SUB65P06-20 |
From old datasheet system P-Channel Enhancement-Mode Trans P-Channel 60-V (D-S), 175C MOSFET TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB P-Channel MOSFET 30V N-Channel PowerTrench MOSFET
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VISAY[Vishay Siliconix] Vishay Intertechnology Inc Vishay Intertechnology,Inc.
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PHP206 |
Dual P-channel enhancement mode MOS transistor 5600 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
FDG6313N FDG6313NNL |
25V Dual N-Channel, Digital FET 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system
|
Fairchild Semiconductor, Corp.
|
DMN5L06V-7 DMN5L06VA-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
|
6AM14 |
Silicon N-Channel/P-Channel Power MOS FET Array 硅N-Channel/P-Channel功率MOS FET阵列
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
CMLDM5757 |
SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS 430 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor Corp
|
IXTL2X240N055T |
140 A, 55 V, 0.0044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET ISOPLUS, I5PAC-5 N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
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